Top Search Results for: 10 base t compared to 100 base t
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- BFP460
- Base current. I. B. 5. Total power dissipation. 2). T. S. ? 100°C .... T. = ?(I.
C. ) f = 1 GHz. V. CE. = parameter in V. 0. 10 - Relevancy: 100% -
- Updated: 18.08.2008
- Press-Fit Technology, a Solderless Method for Mounting Power Modules
- into parts shown in figure 10. Black circles in the base material with higher T
100 %. *) measurement according DIN standards - Relevancy: 58% - - Updated: 18.08.2008
- B7HF200
- Double poly Si self aligned emitter/base. ?. SiGe: C base T. V. early.
? -6.5 V. ? -10 V. 3.5 GHz 150 W/sq ±10%. Poly Resistor 2 p - Relevancy: 57% - - Updated: 18.08.2008
- Customer Premises Equipment
- Two integrated 10/100 Base-T Ethernet MACs. and PHYs for LAN and PC connection.
Two 400 MHz MIPS 24KEc CPUs. (for voice and data handling) - Relevancy: 44% - - Updated: 18.08.2008
- Further Improvements in the Reliability of IGBT Modules
- base plate compared to the total thermal resistance of the The 10 pC at 6 kV
target was reached in September 1996. t (min) - Relevancy: 43% - - Updated: 18.08.2008
- BC817SU
- 5 V, f = 100 MHz. f. T. -. 170. -. MHz. Collector-base capacitance. f = 1 MHz, V.
BE. = 10 V. C. cb. -. 3. -. pF. Emitter-base capacitance - Relevancy: 43% - - Updated: 18.08.2008
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